kst-9075-000 1 STC945 npn silicon transistor description ? general small signal amplifier features ? low collector saturation voltage : v ce(sat) =0.25v(max.) ? low output capacitance : c ob =2pf(typ.) ? complementary pai r with stc733 ordering information type no. marking package code STC945 STC945 to-92 outline dimensions unit : mm 4.5 0.1 4.5 0.1 0.4 0.02 1.27 typ . 2.54 typ . 1 2 3 3.45 0.1 2.25 0.1 2.06 0.1 1.20 0.1 0.38 pin connections 1. emitter 2. collector 3. base 14.0 0.40
kst-9075-000 2 STC945 absolute maximum ratings (ta=25 c) characteristic symbol ratings unit collector-base voltage v cbo 50 v collector-emitter voltage v ceo 40 v emitter-base voltage v ebo 5v collector current i c 150 ma collector dissipation p c 625 mw junction temperature t j 150 c storage temperature t stg -55~150 c electrical characteristics (ta=25 c) characteristic symbol test condition min. typ. max. unit collector-base breakdown voltage bv cbo i c =50 a, i e =0 50 - - v collector-emitter breakdown voltage bv ceo i c =1ma, i b =0 40 - - v emitter-base breakdown voltage bv ebo i e =50 a, i c =0 5 - - v collector cut-off current i cbo v cb =50v, i e =0 - - 0.1 a emitter cut-off current i ebo v eb =5v, i c =0 - - 0.1 a dc current gain h fe * v ce =6v, i c =2ma 70 - 700 - collector-emitter saturation voltage v ce(sat) i c =100ma, i b =10ma - - 0.25 v transistion frequency f t v ce =10v, i c =1ma 80 - - mhz collector output capacitance c ob v cb =10v, i e =0, f=1mhz - 2 3.5 pf noise figure nf v ce =6v, i c =0.1ma, f=1khz, rg=10k --10db * : h fe rank / o : 70 ~ 140, y : 120 ~ 240, g : 200 ~ 400, l : 300 ~ 700
kst-9075-000 3 STC945 electrical characteristic curves fig. 4 h fe -i c fig. 1 p c ?t a fig. 2 i c -v be fig. 3 i c -v ce fig. 5 v ce(sat) -i c
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